SICC Reports 2025 Revenue of Approximately 1.465 Billion Yuan, Boosts R&D Spending to Strengthen Market Leadership Amid Challenges

Stock News03-28

SICC (02631) announced its 2025 performance, achieving total revenue of approximately 1.465 billion yuan. Research and development expenditure reached about 166 million yuan, an increase of 16.9% year-on-year. Gross profit was approximately 142 million yuan. In terms of actual output, the company's scale advantages continued to materialize. In 2025, the company's equivalent output of silicon carbide products reached 690,400 pieces, a year-on-year increase of 68.31%. During the year, the company completed the layout of its full series of large-size products, including 12-inch conductive N-type and P-type, as well as 12-inch semi-insulating silicon carbide substrates. To date, the 12-inch silicon carbide substrate products have received orders from leading customers and have been delivered, marking a significant step for the company into the era of large-size silicon carbide substrates. The company's persistent dedication in materials science is driving progress across multiple industries, with its silicon carbide material innovations providing core support for both the new energy and AI sectors, empowering the future technological revolution. The company's silicon carbide substrates can be widely used in areas such as new energy vehicles, AI data centers, photovoltaic systems, AI glasses, rail transportation, power grids, home appliances, and advanced communication base stations. Leveraging its industry-leading technological innovation capabilities, strong mass production capacity, high-quality product portfolio, close collaborative ecosystem built with upstream and downstream market participants, and efficient management, the company is spearheading the vigorous development of the silicon carbide industry. The company is one of the few globally capable of mass-producing 8-inch silicon carbide substrates, a pioneer in commercializing substrates from 2-inch to 8-inch sizes, a first mover in launching 12-inch silicon carbide substrates, and one of the first to use the liquid-phase method for producing P-type silicon carbide substrates. It has become a key supplier to internationally renowned semiconductor companies, and its products have gained widespread international recognition. The company has established business cooperation with more than half of the world's top ten power semiconductor device manufacturers. The global silicon carbide substrate market is dominated by a few leading enterprises, which hold significant advantages in technological strength, production scale, brand recognition, and market acceptance. According to a report released by Japan's Fuji Keizai in March 2026, SICC held a 27.6% market share in the global conductive silicon carbide substrate market in 2025, ranking first worldwide. Specifically, its market share was 27.5% for 6-inch substrates and 51.3% for 8-inch substrates, fully demonstrating the results of the company's strategic execution.

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