Shares of the leveraged ETF providing double long exposure to Samsung Electronics surged more than 3% in trading.
This move follows news that Samsung has showcased the world's first HBM5 memory product.
The technology is designed for high-performance computing and AI training needs, utilizing a 2nm base die and 1c nm DRAM, supporting a 4096-bit I/O channel and 16-layer stacking for a per-stack bandwidth of 4 TB/s.
To address high power consumption, the HBM5 will incorporate immersion cooling technology, with mass production targeted for the period between 2029 and 2031.
At the event, Samsung's Chief Technology Officer highlighted that as AI systems grow more complex, competitiveness across the entire value chain—from memory and foundry to logic chips and packaging—is becoming increasingly critical.
A core technical feature of the HBM5 is an innovative thermal management solution called Heat Path Block.
This technology directs heat flow between semiconductor wafers, effectively mitigating heat buildup in densely stacked chips to enhance performance stability and operational reliability.
This thermal solution has already been validated on the HBM4E platform and is planned for commercial deployment alongside HBM5.
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