Samsung Electronics Co., Ltd. has announced it has begun delivering samples of the industry's most advanced 12-layer HBM4E to customers, securing an early advantage in the competition for artificial intelligence (AI) memory chips.
South Korea's largest company stated that this 12-layer HBM4E offers a 48GB capacity, representing an improvement of over 30% compared to the previous generation. Samsung initiated mass production of HBM4 in February this year, a milestone that underscores the rapid development pace in the high-bandwidth memory market.
HBM chips, which vertically stack multiple layers of DRAM, have become a critical component for AI processors by significantly increasing data transfer speeds while reducing power consumption.
As investments in AI infrastructure accelerate rapidly, market demand for faster and more energy-efficient memory chips continues to surge sharply. Major memory manufacturers are now competing intensely to secure orders for future AI systems.
Samsung's proactive advancement in 12-layer HBM4 may help strengthen its competitive edge against rivals such as SK Hynix. SK Hynix stated in April that its goal is to achieve mass production of HBM4E by 2027 and to provide HBM4E samples to customers in the second half of this year.
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