The stock of SICC (02631) has risen by more than 8%. As of the time of writing, it is up 7.38% to HK$82, with a turnover of HK$107 million.
According to market analysis, TrendForce forecasts that the shipment share of 8-inch silicon carbide (SiC) substrates will surpass 20% by the year 2030. Northeast Securities has noted that SICC's competitive positioning has progressively shifted from being a "significant domestic player" towards becoming a "leading global competitor."
Information disclosed on the company's official website indicates that by 2025, SICC's overall market share for silicon carbide substrates, as well as its share specifically for 8-inch products, is projected to rank first globally. The silicon carbide substrate industry represents a high-barrier materials sector, characterized by a global competitive landscape that features concentration among top international firms, pursuit by local manufacturers, and an acceleration of structural differentiation.
A separate research report highlights that as AI computing power trends towards high density, continuous full load, and strong transient impacts, high-voltage architecture is a definitive direction for the development of data center power supply systems. Driven by advancements in hardware technology, 2026 is anticipated to be the inaugural year for the implementation of high-voltage architectures in data centers.
The analysis suggests that core third-generation compound semiconductor devices, such as SiC and gallium nitride (GaN), are poised to continuously benefit from upgrades to data center power-related systems. SiC is expected to dominate applications on the room side (gray zone), while GaN is likely to see widespread adoption within server cabinets (white zone). This is projected to create a market structure characterized by "SiC on the left, GaN on the right" from the boundary between gray and white zones, with both technologies benefiting from the iterative advancement of data center power solutions.
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