Recently, U.S. power component manufacturer ON Semiconductor announced a collaboration with China’s INNOSCIENCE to accelerate the global deployment of gallium nitride (GaN) products. The partnership will leverage INNOSCIENCE’s large-scale GaN wafer manufacturing capabilities and ON Semiconductor’s packaging technology to expedite GaN adoption. Samples of jointly developed products are expected to be delivered to customers by the first half of 2026.
ON Semiconductor highlighted that the collaboration focuses on wafer procurement and broader cooperation, including exploring INNOSCIENCE’s mature 8-inch GaN-on-silicon process to scale production of GaN power components. By combining ON Semiconductor’s expertise in system integration, drivers, and packaging with INNOSCIENCE’s strengths in GaN wafer production and mass manufacturing, the alliance aims to bring cost-effective, energy-efficient solutions to market faster.
The company anticipates that this partnership will expand its portfolio of low- and mid-voltage (40V–200V) GaN power components while scaling global production to meet rising demand. The move targets a projected $2.9 billion market by 2030, spanning industrial, automotive, telecom infrastructure, consumer electronics, and AI data centers.
GaN technology offers superior switching speeds, compact size, and lower energy loss, enabling higher power density in smaller footprints. ON Semiconductor acknowledged that limited product variety and insufficient capacity previously hindered GaN adoption in low- and mid-voltage applications. The collaboration aims to overcome these barriers, facilitating large-scale deployment of GaN solutions worldwide.
Key applications include: - **Industrial**: Robotic motor drives, solar microinverters, and optimizers. - **Automotive**: DC-DC converters, synchronous rectifiers. - **Telecom Infrastructure**: DC-DC converters, point-of-load converters. - **Consumer/Mass Market**: Power supplies, adapters, motor drives, audio devices, e-bikes, power tools, robotics. - **AI Data Centers**: Intermediate bus converters, DC-DC converters, backup batteries.
Antoine Jalabert, VP of Corporate Strategy at ON Semiconductor, noted that as power demand grows across industries, GaN’s efficiency, size, and energy savings outperform traditional materials. Partnering with INNOSCIENCE—which operates the world’s largest GaN production base—will help rapidly scale GaN offerings for global customers.
INNOSCIENCE expressed enthusiasm about collaborating with ON Semiconductor to accelerate GaN power technology adoption worldwide. The Chinese firm, a leader in third-generation semiconductor GaN R&D and manufacturing, operates the largest GaN power semiconductor production facility globally. Its product range includes GaN wafers, discrete devices, integrated chips, and modules for applications in consumer electronics, data centers, automotive, and industrial sectors.
As a next-gen semiconductor material, GaN addresses silicon’s limitations in frequency, power efficiency, thermal management, and device size, positioning it as a critical enabler for future electronics. INNOSCIENCE’s technological prowess solidifies its role as a GaN industry pioneer.
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