Semiconductor material concept stocks have surged since the start of the new year. A world-class challenge in semiconductor materials has been overcome in China. In chip manufacturing, the "island-like" connection structures between different material layers have long hindered heat transfer, becoming a critical bottleneck for improving device performance. According to reports, a team led by Academician Hao Yue and Professor Zhang Jincheng from Xidian University has recently used innovative technology to successfully transform rough "island-like" interfaces into atomically smooth "thin films," achieving a breakthrough improvement in chip heat dissipation efficiency and device performance. This groundbreaking achievement, which provides a "Chinese paradigm" for the high-quality integration of semiconductor materials, has been published in Nature Communications and Science Advances. Zhang Jincheng, Vice President and Professor at Xidian University, explained that the uneven surface of the crystal nucleation layer in traditional semiconductor chips severely affects heat dissipation. Ineffective heat dissipation creates "thermal bottlenecks," which can lead to decreased chip performance or even device damage in severe cases. This problem has remained unresolved since the related nucleation technology won the Nobel Prize in 2014, becoming the biggest bottleneck for increasing the power of radio frequency chips. The research team pioneered an "ion implantation-induced nucleation" technique, transforming the originally random growth process into a precisely controllable and uniform growth. Experiments show that the thermal resistance of the new structure interface is only one-third of the traditional one. Gallium nitride microwave power devices prepared using this technology achieved output power densities of 42 W/mm and 20 W/mm in the X-band and Ka-band respectively, increasing the international record by 30% to 40%. This means that with the same chip area, equipment detection range can be significantly increased, and communication base stations can cover longer distances with higher energy efficiency. The localization of semiconductor materials is accelerating. Semiconductor materials are the foundation of chip manufacturing and are crucial materials used in producing integrated circuits, discrete devices, sensors, and optoelectronic devices. From photoresists to silicon wafers, from electronic special gases to CMP polishing pads, semiconductor materials are hailed as the "food of the chip industry." Tu Hailing, Academician of the Chinese Academy of Engineering and Honorary President of the General Research Institute for Nonferrous Metals, has stated that the localization process is accelerating. Domestic substitution in areas like large-size silicon materials and gallium arsenide is experiencing a "golden window period." The localization rate of semiconductor-grade silicon materials has exceeded 50%, and the localization rate of materials like polishing fluids has also surpassed 30%. End-user demand from areas such as AI computing power and new energy vehicles is creating multiplicative growth opportunities for upstream material companies. Furthermore, industry innovation is thriving, with third-generation semiconductor materials like silicon carbide (SiC) and gallium nitride (GaN) being rapidly adopted in new energy vehicles and 5G communications, effectively enhancing device performance and energy efficiency. According to Everbright Securities, TECHCET estimates the global semiconductor materials market will reach approximately $70 billion in 2025, a year-on-year increase of 6%. The agency also forecasts the market size will exceed $87 billion by 2029. Domestically, statistics and forecasts from the China Business Industry Research Institute indicate that China's key materials market will reach 174.1 billion yuan in 2025, a year-on-year increase of 21.1%. A Ping An Securities research report suggests that against the current backdrop of geopolitical risks, the localization of semiconductor materials may accelerate. With the rapid development of advanced processes, memory, and packaging, coupled with strong policy support for localization, domestic semiconductor materials are facing significant development opportunities. Semiconductor material concept stocks have gotten off to a strong start. In the secondary market, since the beginning of 2026, stocks related to semiconductor materials have shown strong performance. On January 16, against the backdrop of a broader A-share market adjustment, semiconductor material concept stocks bucked the trend and rose strongly. Silicon carbide leader SICC Co., Ltd. hit the 20% daily limit up, Kangqiang Electron recorded a 10% limit up, while Shanghai Hejing, Shen Gong, Huahai Chenke, Huamo Technology, Anji Technology, and others all rose more than 7%. On January 16 alone, 12 semiconductor material concept stocks saw their intraday share prices hit record highs, including Helin Wein, Kema Technology, Kaide Quartz, Nanda Optoelectronics, and others. According to Securities Times · DataBa statistics, as of the close on January 16, the average increase for semiconductor material concept stocks since the start of the year was 21.15%, significantly outperforming the Shanghai Composite Index, the ChiNext Index, the STAR 50 Index, and others. The period for disclosing annual performance forecasts is currently underway, making earnings a key focus for investors. Against the backdrop of rapid expansion in sectors like AI computing power, data centers, and autonomous driving, which semiconductor material concept stocks possess high growth potential? According to DataBa statistics, based on consensus forecasts from five or more institutions, there are 12 semiconductor material concept stocks whose net profit growth rates for both 2026 and 2027 are expected to exceed 20%. Among these 12 stocks, comparing the January 16 closing price with the institutions' consensus target price, Debang Technology and Haohua Technology have potential upside exceeding 10%, at 39.21% and 10.86% respectively. Debang Technology recently disclosed on an investor interaction platform that its die-attach adhesive has entered mass production supply at Hongmaowei, the packaging and testing platform of Yangtze Memory Technologies Co., primarily used in the IC packaging process. Its DAF (Die-Attach Film) has completed technical verification and achieved market access. Haohua Technology currently has an annual nitrogen trifluoride production capacity of 5,000 tons. The company is constructing a new 6,000 tons/year nitrogen trifluoride project in the Yantan Base in Zigong, Sichuan, with the first phase of 3,000 tons already operational. The company's nitrogen trifluoride products are mainly used in etching, cleaning, and other processes in integrated circuit manufacturing.
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