A new global storage tracker report from Counterpoint Research reveals that Samsung has reclaimed the top position in the global DRAM market in the second quarter of 2026, securing a 39% market share and returning to its 2024 performance levels.
In contrast, SK Hynix saw its market share drop from 39% in Q2 2025 to 26% in Q2 2026, despite a 214% year-on-year increase in quarterly revenue. Micron Technology, another top-three global memory manufacturer, posted strong quarterly results, nearly tying for second place with SK Hynix at a 25% market share. Micron has maintained robust growth momentum since the AI wave began in the second half of 2023.
As AI adoption continues to drive the deployment of advanced computing infrastructure, DRAM market demand has consistently outpaced supply. This trend has not only boosted demand for traditional DRAM used in CPUs but also accelerated the adoption of next-generation high-bandwidth memory (HBM) in GPUs.
Key insights on competitive dynamics
Counterpoint Research Senior Analyst Jeongku Choi noted that Samsung has successfully overcome challenges faced over the past year, achieving a year-on-year performance turnaround. The company has benefited from strong demand for traditional DRAM and price increases, while also expanding its share in the HBM segment. Looking ahead, further price hikes expected in the third quarter of 2026 could enhance Samsung's profitability.
In Q2 2026, traditional DRAM prices rose quarter-on-quarter, while HBM prices declined year-on-year. The drop in average HBM prices was particularly pronounced, driven by price reductions for existing HBM3E products and delays in the launch of HBM4. However, with traditional DRAM prices continuing to rise, HBM prices are expected to recover next year.
Counterpoint Research Director MS Hwang commented that while SK Hynix achieved record highs both quarter-on-quarter and year-on-year, its growth rate lagged behind competitors due to pressure from Samsung and Micron squeezing its market share from both sides. Hwang explained that this can be viewed from two angles: first, SK Hynix has the highest share of HBM shipments and revenue among its competitors, making it more vulnerable to the decline in average HBM prices. Second, SK Hynix signed long-term supply agreements (LTAs) earlier than its rivals. These agreements typically set price floors and ceilings based on fixed contract prices, so during an upcycle in memory prices, earlier fixed prices tend to be lower than current market rates.
Nevertheless, as shipments of NVIDIA Vera Rubin and AMD Instinct MI455X GPU servers begin to ramp up, HBM4 products are also starting to gain volume in the third quarter of 2026. With the product mix gradually shifting toward HBM4, the decline in HBM prices is expected to narrow.
Intensifying competition and market outlook
In the booming DRAM market, competition is further intensifying. Counterpoint Research Vice President Neil Shah noted that Micron's DRAM revenue has grown approximately fivefold since Q2 2025, positioning it to surpass SK Hynix and rise to second place globally. Market competition will continue to be influenced by capacity allocation and LTA pricing mechanisms.
Other standout performers in Q2 2026 include CXMT (ChangXin Memory Technologies), which saw a 716% year-on-year growth, and Nanya Technology, which grew 690% year-on-year. CXMT has become the world's fastest-growing DRAM manufacturer, benefiting from strong demand for traditional DRAM in the Chinese market and ongoing capacity expansion. Nanya Technology has been boosted by improved supply-demand dynamics for DDR and LPDDR4/5 products.
Shah added that the key development to watch in the second half of 2026 is how CXMT will leverage its recent IPO to further drive capacity expansion in HBM and LPDDR6. If CXMT can increase capacity to meet both domestic and international demand, its market share could rise further, potentially reshaping the market landscape. For CXMT, the question is not 'if' but 'when' it will join the ranks of the world's top three memory manufacturers.
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