Navitas Semiconductor and GlobalFoundries Partner to Boost U.S. GaN Manufacturing

Reuters11-20

<a href="https://laohu8.com/S/NVTSW">Navitas Semiconductor</a> and GlobalFoundries Partner to Boost U.S. GaN Manufacturing

Navitas Semiconductor Corporation and GlobalFoundries have announced a long-term strategic partnership to accelerate the development and manufacturing of gallium nitride (GaN) technology in the United States. This collaboration aims to expand U.S. capacity for advanced GaN solutions, targeting high power applications such as AI datacenters, performance computing, energy infrastructure, and industrial electrification. The partnership will leverage Navitas' expertise in GaN innovation and GlobalFoundries' manufacturing capabilities, with next-generation GaN technology set to be produced at GlobalFoundries' Burlington, Vermont facility. Development is scheduled to begin in early 2026, with production expected to follow later that year. The alliance supports national security, competitiveness, and aims to drive decarbonization in next-generation energy and compute platforms.

Disclaimer: This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. Navitas Semiconductor Corporation published the original content used to generate this news brief via GlobeNewswire (Ref. ID: GNW9579531-en) on November 20, 2025, and is solely responsible for the information contained therein.

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{"i18n":{"language":"en_US"},"isChannel":false,"data":{"share":"https://ttm.financial/m/news/2584134024?lang=en_US&edition=fundamental","thumbnail":"","is_english":true,"pubTime":"2025-11-20 21:30","share_image_url":"https://static.laohu8.com/e9f99090a1c2ed51c021029395664489","id":"2584134024","market":"us","top_or_hot":-1,"title":"Navitas Semiconductor and GlobalFoundries Partner to Boost U.S. GaN Manufacturing","media":"Reuters","content":"<html xmlns=\"http://www.w3.org/1999/xhtml\" xmlns:newsg2=\"http://iptc.org/std/nar/2006-10-01/\" xmlns:xhtml=\"http://www.w3.org/1999/xhtml\"><head><title>\n      <a href=\"https://laohu8.com/S/NVTSW\">Navitas Semiconductor</a> and GlobalFoundries Partner to Boost U.S. GaN Manufacturing\n    </title></head><body><div xmlns:xsd=\"http://www.w3.org/2001/XMLSchema\" xmlns:xsi=\"http://www.w3.org/2001/XMLSchema-instance\">\n<p>\n        <a href=\"https://laohu8.com/S/NVTS\">Navitas</a> Semiconductor Corporation and GlobalFoundries have announced a long-term strategic partnership to accelerate the development and manufacturing of gallium nitride (GaN) technology in the United States. This collaboration aims to expand U.S. capacity for advanced GaN solutions, targeting high power applications such as AI datacenters, performance computing, energy infrastructure, and industrial electrification. The partnership will leverage Navitas' expertise in GaN innovation and GlobalFoundries' manufacturing capabilities, with next-generation GaN technology set to be produced at GlobalFoundries' Burlington, Vermont facility. Development is scheduled to begin in early 2026, with production expected to follow later that year. The alliance supports national security, competitiveness, and aims to drive decarbonization in next-generation energy and compute platforms.\n      </p>\n</div><div xmlns:xsd=\"http://www.w3.org/2001/XMLSchema\" xmlns:xsi=\"http://www.w3.org/2001/XMLSchema-instance\">\n<em>Disclaimer: <span>This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. Navitas Semiconductor Corporation published the original content used to generate this news brief via GlobeNewswire (Ref. ID: GNW9579531-en) on November 20, 2025, and is solely responsible for the information contained therein.</span></em>\n</div></body></html>","source":null,"html":"<!DOCTYPE html>\n<html>\n<head>\n<meta http-equiv=\"Content-Type\" content=\"text/html; charset=utf-8\" />\n<meta name=\"viewport\" content=\"width=device-width,initial-scale=1.0,minimum-scale=1.0,maximum-scale=1.0,user-scalable=no\"/>\n<meta name=\"format-detection\" content=\"telephone=no,email=no,address=no\" />\n<title>Navitas Semiconductor and GlobalFoundries Partner to Boost U.S. GaN Manufacturing</title>\n<style type=\"text/css\">\na,abbr,acronym,address,applet,article,aside,audio,b,big,blockquote,body,canvas,caption,center,cite,code,dd,del,details,dfn,div,dl,dt,\nem,embed,fieldset,figcaption,figure,footer,form,h1,h2,h3,h4,h5,h6,header,hgroup,html,i,iframe,img,ins,kbd,label,legend,li,mark,menu,nav,\nobject,ol,output,p,pre,q,ruby,s,samp,section,small,span,strike,strong,sub,summary,sup,table,tbody,td,tfoot,th,thead,time,tr,tt,u,ul,var,video{ font:inherit;margin:0;padding:0;vertical-align:baseline;border:0 }\nbody{ font-size:16px; line-height:1.5; color:#999; background:transparent; }\n.wrapper{ overflow:hidden;word-break:break-all;padding:10px; }\nh1,h2{ font-weight:normal; line-height:1.35; margin-bottom:.6em; }\nh3,h4,h5,h6{ line-height:1.35; margin-bottom:1em; }\nh1{ font-size:24px; }\nh2{ font-size:20px; }\nh3{ font-size:18px; }\nh4{ font-size:16px; }\nh5{ font-size:14px; }\nh6{ font-size:12px; }\np,ul,ol,blockquote,dl,table{ margin:1.2em 0; }\nul,ol{ margin-left:2em; }\nul{ list-style:disc; }\nol{ list-style:decimal; }\nli,li p{ margin:10px 0;}\nimg{ max-width:100%;display:block;margin:0 auto 1em; }\nblockquote{ color:#B5B2B1; border-left:3px solid #aaa; padding:1em; }\nstrong,b{font-weight:bold;}\nem,i{font-style:italic;}\ntable{ width:100%;border-collapse:collapse;border-spacing:1px;margin:1em 0;font-size:.9em; }\nth,td{ padding:5px;text-align:left;border:1px solid #aaa; }\nth{ font-weight:bold;background:#5d5d5d; }\n.symbol-link{font-weight:bold;}\n/* header{ border-bottom:1px solid #494756; } */\n.title{ margin:0 0 8px;line-height:1.3;color:#ddd; }\n.meta {color:#5e5c6d;font-size:13px;margin:0 0 .5em; }\na{text-decoration:none; color:#2a4b87;}\n.meta .head { display: inline-block; overflow: hidden}\n.head .h-thumb { width: 30px; height: 30px; margin: 0; padding: 0; border-radius: 50%; float: left;}\n.head .h-content { margin: 0; padding: 0 0 0 9px; float: left;}\n.head .h-name {font-size: 13px; color: #eee; margin: 0;}\n.head .h-time {font-size: 11px; color: #7E829C; margin: 0;line-height: 11px;}\n.small {font-size: 12.5px; display: inline-block; transform: scale(0.9); -webkit-transform: scale(0.9); transform-origin: left; -webkit-transform-origin: left;}\n.smaller {font-size: 12.5px; display: inline-block; transform: scale(0.8); -webkit-transform: scale(0.8); transform-origin: left; -webkit-transform-origin: left;}\n.bt-text {font-size: 12px;margin: 1.5em 0 0 0}\n.bt-text p {margin: 0}\n</style>\n</head>\n<body>\n<div class=\"wrapper\">\n<header>\n<h2 class=\"title\">\nNavitas Semiconductor and GlobalFoundries Partner to Boost U.S. GaN Manufacturing\n</h2>\n\n<h4 class=\"meta\">\n\n\n<a class=\"head\" href=\"https://laohu8.com/wemedia/1032215980\">\n\n\n<div class=\"h-thumb\" style=\"background-image:url(https://community-static.tradeup.com/news/4567337cbdf294b657b1fa87c5488b48);background-size:cover;\"></div>\n\n<div class=\"h-content\">\n<p class=\"h-name\">Reuters </p>\n<p class=\"h-time\">2025-11-20 21:30</p>\n</div>\n\n</a>\n\n\n</h4>\n\n</header>\n<article>\n<html xmlns=\"http://www.w3.org/1999/xhtml\" xmlns:newsg2=\"http://iptc.org/std/nar/2006-10-01/\" xmlns:xhtml=\"http://www.w3.org/1999/xhtml\"><head><title>\n      <a href=\"https://laohu8.com/S/NVTSW\">Navitas Semiconductor</a> and GlobalFoundries Partner to Boost U.S. GaN Manufacturing\n    </title></head><body><div xmlns:xsd=\"http://www.w3.org/2001/XMLSchema\" xmlns:xsi=\"http://www.w3.org/2001/XMLSchema-instance\">\n<p>\n        <a href=\"https://laohu8.com/S/NVTS\">Navitas</a> Semiconductor Corporation and GlobalFoundries have announced a long-term strategic partnership to accelerate the development and manufacturing of gallium nitride (GaN) technology in the United States. This collaboration aims to expand U.S. capacity for advanced GaN solutions, targeting high power applications such as AI datacenters, performance computing, energy infrastructure, and industrial electrification. The partnership will leverage Navitas' expertise in GaN innovation and GlobalFoundries' manufacturing capabilities, with next-generation GaN technology set to be produced at GlobalFoundries' Burlington, Vermont facility. Development is scheduled to begin in early 2026, with production expected to follow later that year. The alliance supports national security, competitiveness, and aims to drive decarbonization in next-generation energy and compute platforms.\n      </p>\n</div><div xmlns:xsd=\"http://www.w3.org/2001/XMLSchema\" xmlns:xsi=\"http://www.w3.org/2001/XMLSchema-instance\">\n<em>Disclaimer: <span>This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. Navitas Semiconductor Corporation published the original content used to generate this news brief via GlobeNewswire (Ref. ID: GNW9579531-en) on November 20, 2025, and is solely responsible for the information contained therein.</span></em>\n</div></body></html>\n\n</article>\n</div>\n</body>\n</html>\n","isBrief":false,"type":0,"news_type":1,"symbol":"LU2095319765.USD","symbol_name":"Natixis Thematics Subscription Economy R/A USD","start_time":0,"source_url":"https://api.refinitiv.com/data/news/v1/stories/urn:newsml:reuters.com:20251120:nNDL1JSn8m:1","article_id":"2584134024","we_media_id":"1032215980","thumbnails":[],"rights":null,"url":"https://stock-news.laohu8.com/highlight/detail?id=2584134024","pubTimestamp":1763645413,"columns":[],"sourceInfo":null,"weMediaInfo":{"media_name":"Reuters","introduction":"Reuters.com brings you the latest news from around the world, covering breaking news in markets, business, politics, entertainment and technology","home_visible":1,"id":"1032215980","head_image":"https://community-static.tradeup.com/news/4567337cbdf294b657b1fa87c5488b48"},"summary":"Navitas Semiconductor Corporation and GlobalFoundries have announced a long-term strategic partnership to accelerate the development and manufacturing of gallium nitride  technology in the United States. This collaboration aims to expand U.S. capacity for advanced GaN solutions, targeting high power applications such as AI datacenters, performance computing, energy infrastructure, and industrial electrification. The partnership will leverage Navitas' expertise in GaN innovation and GlobalFoundries' manufacturing capabilities, with next-generation GaN technology set to be produced at GlobalFoundries' Burlington, Vermont facility. Development is scheduled to begin in early 2026, with production expected to follow later that year. The alliance supports national security, competitiveness, and aims to drive decarbonization in next-generation energy and compute platforms.Disclaimer: This news brief was created by Public Technologies  using generative artificial intelligence. While PUBT striv","collect":0,"end_time":0,"defaultTopTitle":"","property":[],"viewcount":null,"language":"en","relate_stocks":{"LU2095319765.USD":"Natixis Thematics Subscription Economy R/A USD","BK4588":"碎股","IE00BKPKM429.USD":"NEUBERGER BERMAN GLOBAL SUSTAINABLE EQUITY \"A\" (USD) ACC","GFS":"GLOBALFOUNDRIES Inc.","BK4141":"半导体产品","NVTS":"纳微半导体","BK4112":"金融交易所和数据","NDAQ":"纳斯达克OMX交易所","LU2210149790.SGD":"Natixis Thematics Subscription Economy R/A SGD-H","BK4605":"半导体精选","BK4585":"ETF&股票定投概念","LU2210150020.SGD":"Natixis Thematics Subscription Economy R/A SGD","IE00B3QW5Z07.USD":"GUINNESS GLOBAL MONEY MANAGERS \"C\" (USD) ACC","IE00BGHQF748.EUR":"GUINNESS GLOBAL MONEY MANAGERS \"C\" (EUR) ACC","IE00B64PRP62.GBP":"GUINNESS GLOBAL MONEY MANAGERS \"C\" (GBP) ACC","LU0314104364.USD":"MANULIFE GF AMERICAN GROWTH \"AA\" (USD) INC"},"translate_title":"纳微半导体与格芯合作推动美国GaN制造","themeId":null,"isJumpTheme":false,"ttsUrl":null,"symbols_score_info":{"NDAQ":0.9,"GFS":0.9,"NVTS":0.9},"content_text":"Navitas Semiconductor and GlobalFoundries Partner to Boost U.S. GaN Manufacturing\n    \n\nNavitas Semiconductor Corporation and GlobalFoundries have announced a long-term strategic partnership to accelerate the development and manufacturing of gallium nitride (GaN) technology in the United States. This collaboration aims to expand U.S. capacity for advanced GaN solutions, targeting high power applications such as AI datacenters, performance computing, energy infrastructure, and industrial electrification. The partnership will leverage Navitas' expertise in GaN innovation and GlobalFoundries' manufacturing capabilities, with next-generation GaN technology set to be produced at GlobalFoundries' Burlington, Vermont facility. Development is scheduled to begin in early 2026, with production expected to follow later that year. The alliance supports national security, competitiveness, and aims to drive decarbonization in next-generation energy and compute platforms.\n      \n\nDisclaimer: This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. Navitas Semiconductor Corporation published the original content used to generate this news brief via GlobeNewswire (Ref. ID: GNW9579531-en) on November 20, 2025, and is solely responsible for the information contained therein.","kind":"highlight","is_publish_news":true,"is_publish_highlight":false,"is_publish_live":false,"is_publish_wemedia":null,"editions":null,"column":"","sentiment":"1","news_tag":"corporation","news_rank":0,"symbols":[],"gpt_button":0,"need_auth":false,"code":"91000000","status":"200"},"commentList":[],"isCommentEnd":true,"newsSizeData":{"likeSize":0,"commentSize":0,"repostSize":0,"favoriteSize":0,"likeStatus":false,"favoriteStatus":false},"APP":{"userAgent":"Mozilla/5.0 AppleWebKit/537.36 (KHTML, like Gecko; compatible; ClaudeBot/1.0; +claudebot@anthropic.com)","isDev":false,"isTTM":true,"deviceId":"web-server-community-laohu8-v3","version":"4.35.9","shortVersion":"4.35.9","platform":"web","vendor":"web","appName":"ttm","isIOS":false,"isAndroid":false,"isTiger":false,"isTHS":false,"isWeiXin":false,"isWeiXinMini":false,"isWeiBo":false,"isQQ":false,"isBaiduSwan":false,"isBaiduBox":false,"isDingTalk":false,"isToutiao":false,"isOnePlus":false,"isHuaWei":false,"isXiaomi":false,"isXiaomiWebView":false,"isOppo":false,"isVivo":false,"isSamsung":false,"isMobile":false},"href":"/m/news/2584134024","isCrawlerRequest":true}