- Navitas CEO Chris Allexandre discussed GaN and SiC developments aimed at AI data centers and energy infrastructure during an interview at APEC 2026 in San Antonio.
- He cited fifth-generation GeneSiC trench-assisted planar technology with a 35% improvement in figure of merit and noted enhanced gate-oxide reliability.
- Comments also covered DC-to-DC platforms, including 800 V-to-50 V and 800 V-to-6 V all-GaN power delivery boards developed with Nvidia.
- He referenced a 250 kW solid-state transformer demonstrator built with EPFL using SiCPAK modules.
- Allexandre said the company is prioritizing four high-power markets: AI data centers, green infrastructure, performance computing, and industrial electrification.
Disclaimer: This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. Navitas Semiconductor Corporation published the original content used to generate this news brief on March 27, 2026, and is solely responsible for the information contained therein.
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