Samsung Electronics (KRX:005930) and SK Hynix (KRX:000660) are driving production of flash NAND memory chips with more than 200 layers at their China plants, Reuters reported on Wednesday, citing four people with knowledge of the matter.
Samsung is overhauling its plant in Xian to manufacture 286-layer V9 NAND chips with a monthly output target of 5,000 wafers in December and 40,000 by December 2027, the report cited one of the sources as saying.
SK Hynix will shift production at its Dalian plants to NAND chips with 240 layers or more, three of the sources told the news outlet.
Samsung Electronics and SK Hynix did not immediately respond to a request for comment from MT Newswires.
(Market Chatter news is derived from conversations with market professionals globally. This information is believed to be from reliable sources but may include rumor and speculation. Accuracy is not guaranteed.)
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