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2021-07-15

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05:09","market":"us","language":"zh","title":"英特尔5nm工艺曝光，目标超越台积电3nm","url":"https://stock-news.laohu8.com/highlight/detail?id=2151543332","media":"腾讯新闻","summary":"从表中可以看到，英特尔工艺在目前10nm节点上晶体管密度已经达到了已经达到了1.06亿/mm ，略超三星与台积电在7nm上分别0.95亿/mm 和0.97亿/mm 的密度。而在下一代7nm的节点，英特尔目标将晶体管密度提升至1.8亿/mm ，如果计划达成，其密度不仅将超过目前台积电最新的5nm工艺，更大幅甩开三星的5nm。在随后的5nm工艺中，英特尔将目标定在了3亿/mm ，此目标同样高于台积电的3nm计划，与三星3nm的差距还会进一步拉大。","content":"<html><body><article><p>Digitimes在日前发表的研究报告中，分析了<a href=\"https://laohu8.com/S/SMSN.UK\">三星</a>、<a href=\"https://laohu8.com/S/TSM\">台积电</a>、Intel及<a href=\"https://laohu8.com/S/IBM\">IBM</a>四家的半导体工艺密度问题，并对比了10nm、7nm、5nm、3nm及2nm的情况。</p><img src=\"https://fid-75186.picgzc.qpic.cn/20210715052058764d246homx5ud9zmy\"/><p>从表中可以看到，<a href=\"https://laohu8.com/S/INTC\">英特尔</a>工艺在目前10nm节点上晶体管密度已经达到了已经达到了1.06亿/mm ，略超三星与台积电在7nm上分别0.95亿/mm 和0.97亿/mm 的密度。</p><p>而在下一代7nm的节点，英特尔目标将晶体管密度提升至1.8亿/mm ，如果计划达成，其密度不仅将超过目前台积电最新的5nm工艺，更大幅甩开三星的5nm。</p><p>在随后的5nm工艺中，英特尔将目标定在了3亿/mm 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class=\"title\">\n英特尔5nm工艺曝光，目标超越台积电3nm\n</h2>\n\n<h4 class=\"meta\">\n\n\n2021-07-15 05:09 北京时间&nbsp;&nbsp;&nbsp;<a href=http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN202107150521007c20884f&s=b><strong>腾讯新闻</strong></a>\n\n\n</h4>\n\n</header>\n<article>\n<div>\n<p>Digitimes在日前发表的研究报告中，分析了三星、台积电、Intel及IBM四家的半导体工艺密度问题，并对比了10nm、7nm、5nm、3nm及2nm的情况。从表中可以看到，英特尔工艺在目前10nm节点上晶体管密度已经达到了已经达到了1.06亿/mm ，略超三星与台积电在7nm上分别0.95亿/mm 和0.97亿/mm 的密度。而在下一代7nm的节点，英特尔目标将晶体管密度提升至1.8亿/mm...</p>\n\n<a href=\"http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN202107150521007c20884f&s=b\">Web Link</a>\n\n</div>\n\n\n</article>\n</div>\n</body>\n</html>\n","type":0,"thumbnail":"https://static.tigerbbs.com/975836d8c6eb511241583dccb0d387f2","relate_stocks":{"EWT":"台湾ETF-iShares MSCI","INTC":"英特尔","TSM":"台积电","03086":"华夏纳指","09086":"华夏纳指-U","03145":"华夏亚洲高息股"},"source_url":"http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN202107150521007c20884f&s=b","is_english":false,"share_image_url":"https://static.laohu8.com/9a95c1376e76363c1401fee7d3717173","article_id":"2151543332","content_text":"Digitimes在日前发表的研究报告中，分析了三星、台积电、Intel及IBM四家的半导体工艺密度问题，并对比了10nm、7nm、5nm、3nm及2nm的情况。从表中可以看到，英特尔工艺在目前10nm节点上晶体管密度已经达到了已经达到了1.06亿/mm ，略超三星与台积电在7nm上分别0.95亿/mm 和0.97亿/mm 的密度。而在下一代7nm的节点，英特尔目标将晶体管密度提升至1.8亿/mm ，如果计划达成，其密度不仅将超过目前台积电最新的5nm工艺，更大幅甩开三星的5nm。在随后的5nm工艺中，英特尔将目标定在了3亿/mm ，此目标同样高于台积电的3nm计划，与三星3nm的差距还会进一步拉大。","news_type":1},"isVote":1,"tweetType":1,"viewCount":178,"authorTweetTopStatus":1,"verified":2,"comments":[],"imageCount":0,"langContent":"EN","totalScore":0}],"lives":[]}