Digitimes在日前发表的研究报告中,分析了三星、台积电、Intel及IBM四家的半导体工艺密度问题,并对比了10nm、7nm、5nm、3nm及2nm的情况。从表中可以看到,英特尔工艺在目前10nm节点上晶体管密度已经达到了已经达到了1.06亿/mm ,略超三星与台积电在7nm上分别0.95亿/mm 和0.97亿/mm 的密度。而在下一代7nm的节点,英特尔目标将晶体管密度提升至1.8亿/mm...
Source Link腾讯新闻2021-07-15
Digitimes在日前发表的研究报告中,分析了三星、台积电、Intel及IBM四家的半导体工艺密度问题,并对比了10nm、7nm、5nm、3nm及2nm的情况。从表中可以看到,英特尔工艺在目前10nm节点上晶体管密度已经达到了已经达到了1.06亿/mm ,略超三星与台积电在7nm上分别0.95亿/mm 和0.97亿/mm 的密度。而在下一代7nm的节点,英特尔目标将晶体管密度提升至1.8亿/mm...
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