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allenkee
2021-07-15

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英特尔5nm工艺曝光，目标超越台积电3nm

从表中可以看到，英特尔工艺在目前10nm节点上晶体管密度已经达到了已经达到了1.06亿/mm ，略超三星与台积电在7nm上分别0.95亿/mm 和0.97亿/mm 的密度。而在下一代7nm的节点，英特尔目标将晶体管密度提升至1.8亿/mm ，如果计划达成，其密度不仅将超过目前台积电最新的5nm工艺，更大幅甩开三星的5nm。在随后的5nm工艺中，英特尔将目标定在了3亿/mm ，此目标同样高于台积电的3nm计划，与三星3nm的差距还会进一步拉大。

英特尔5nm工艺曝光，目标超越台积电3nm

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